High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
AI Overview
The Department of War seeks development of high-voltage silicon-carbide MOSFETs (>10 kV) with fast turn-on and high current density capabilities to replace complex COTS device arrays. This advancement enables more compact, efficient switching solutions for high-energy capacitor discharge applications with improved gate-driver requirements.
This summary is AI-generated from the official solicitation.
Key Details
Official Description
The DOW needs SWaP-favorable solutions for fast turn-on and low-jitter SiC MOSFETs to generate high current densities from high voltage capacitors. Current methods of high-current/voltage switching from SiC MOSFETS rely on an array created from series and parallel combinations of commercial off the shelf (COTS) devices [Ref 1]. However, these device arrays are limited in the voltage and amplitude they can switch, have complicated gate driving circuits, and can become size limited. To improve cur...
Change History
High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
Status changed from Pre-Release to Open
High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
Content updated: phase_1_description, phase_2_description
High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
Close Date changed from 2026-04-22 to 2026-06-03
High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
Open Date changed from 2026-03-25 to 2026-05-06
High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
Status changed from Removed to Pre-Release
High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
Opportunity DON26TZ01-NV019 no longer available
High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
New opportunity: High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
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